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Updated: May 31, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Metallic quantum well states in artificial structures of strongly correlated oxide
K Yoshimatsu1, K Horiba, H Kumigashira
1Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan.
Abstract:
The quantum confinement of strongly correlated electrons in artificial structures provides a platform for studying the behavior of correlated Fermi-liquid states in reduced dimensions. We report the creation and control of two-dimensional electron-liquid states in ultrathin films of SrVO(3) grown on Nb:SrTiO(3) substrates, which are artificial oxide structures that can be varied in thickness by single monolayers. Angle-resolved photoemission from the SrVO(3)/Nb:SrTiO(3) samples shows metallic quantum well states that are adequately described by the well-known phase-shift quantization rule. The observed quantum well states in SrVO(3) ultrathin films exhibit distinctive features--such as orbital-selective quantization originating from the anisotropic orbital character of the V 3d states and unusual band renormalization of the subbands near the Fermi level--that reflect complex interactions in the quantum well.
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