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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

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Updated: May 31, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Graphene transistors are insensitive to pH changes in solution.

Wangyang Fu1, Cornelia Nef, Oren Knopfmacher

  • 1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.

Nano Letters
|July 20, 2011
PubMed
Summary
This summary is machine-generated.

Graphene field-effect transistors (GFETs) show minimal pH response, unlike silicon sensors. This indicates clean graphene can serve as a stable reference electrode in electrolytes, clarifying previous research inconsistencies.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrochemistry

Background:

  • Graphene field-effect transistors (GFETs) are explored for biosensing applications.
  • Previous studies report varied pH sensitivity in GFETs, leading to conflicting conclusions.
  • Understanding graphene's surface interactions is crucial for device applications.

Purpose of the Study:

  • To investigate the intrinsic pH sensitivity of graphene field-effect transistors.
  • To determine the influence of surface modifications on GFET pH response.
  • To assess the potential of GFETs as reference electrodes in aqueous environments.

Main Methods:

  • Fabrication and characterization of graphene field-effect transistors.
  • Measurement of transfer characteristics under varying pH buffer conditions.
  • Surface modification of graphene with hydrophobic (fluorobenzene) and insulating (Al-oxide) layers.

Main Results:

  • As-prepared GFETs exhibit negligible gate-voltage shifts with changing pH.
  • Hydrophobic coating further reduces the already low pH-induced gate shift.
  • An Al-oxide layer leads to a significant, opposite shift, indicating surface interaction.
  • Clean graphene demonstrates minimal sensitivity to proton chemical potential.

Conclusions:

  • Intrinsic graphene does not possess significant proton sensitivity.
  • GFETs can function as stable reference electrodes in aqueous electrolytes.
  • The observed pH-dependent gate shifts in literature are likely due to surface functionalization or contamination.
  • This work clarifies the behavior of GFETs in electrochemical sensing.