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Updated: May 30, 2026
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Wafer-scale strain engineering of ultrathin semiconductor crystalline layers
Marina S Leite1, Emily C Warmann, Gregory M Kimball
1Thomas J. Waston Laboratories of Applied Physics, Calfornia Institute of Technology, 1200 East Calfornia Blvd., MC 128-95, Pasadena, CA 91125, USA. mleite@caltech.edu.
Abstract:
The fabrication of a wafer-scale dislocation-free, fully relaxed single crystalline template for epitaxial growth is demonstrated. Transferring biaxially-strained Inx Ga1-x As ultrathin films from InP substrates to a handle support results in full strain relaxation and the Inx Ga1-x As unit cell assumes its bulk value. Our realization demonstrates the ability to control the lattice parameter and energy band structure of single layer crystalline compound semiconductors in an unprecedented way.
