Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications

Area of Science:

• Semiconductor Physics
• Materials Science
• Nanotechnology

Background:

• Schottky-barrier field-effect transistors (FETs) are crucial in nanoelectronics.
• Understanding charge transport in nanowire-based devices is essential for advanced applications.
• Accurate theoretical models are needed to guide the design of novel nanowire sensors.

Purpose of the Study:

• To present a novel theoretical framework for calculating charge transport in nanowire Schottky-barrier FETs.
• To provide a simulation platform for developing nanowire-based sensors.
• To capture essential physical mechanisms governing charge transport in these devices.

Main Methods:

• Combined finite element method (FEM) for electrostatics with Landauer-Büttiker and non-equilibrium Green's functions (NEGF) for transport.
• Solved Poisson's equation to model electrostatic potential across the Schottky barrier.
• Calculated charge transport through devices of arbitrary one-dimensional geometry.

Main Results:

• The theoretical model accurately reproduces typical current-voltage (I-V) characteristics of FETs.
• Simulated dependence of saturated drain current on gate field and geometry aligns well with experimental data.
• The framework is versatile for various one-dimensional Schottky-barrier FET geometries.

Conclusions:

• The presented theoretical framework offers a conceptually simple yet physically relevant approach to model charge transport.
• The model's agreement with experimental data validates its predictive power.
• This work provides a valuable simulation platform for advancing nanowire-based sensor technology.