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Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperature
M Hassan1, G Springholz, R T Lechner
1Institut für Halbleiter und Festkörperphysik, Johannes Kepler University, A-4040 Linz, Austria.
Journal of Crystal Growth
|July 22, 2011
Summary
Optimizing growth conditions for ferromagnetic germanium manganese telluride (GeMnTe) is crucial. Single-phase GeMnTe with high Curie temperatures up to 200 K was achieved, enhancing its potential as a diluted magnetic semiconductor.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Semiconductor Spintronics
Background:
- Diluted magnetic semiconductors (DMS) are key for spintronic devices.
- Ferromagnetic Ge(1-x)Mn(x)Te (GeMnTe) offers a wide composition range for solid solutions.
- Maximum magnetization in GeMnTe occurs near x(Mn)≈0.5.
Purpose of the Study:
- To systematically investigate the molecular beam epitaxy (MBE) of GeMnTe.
- To determine the optimal growth conditions for single-phase GeMnTe.
- To understand the impact of growth parameters on magnetic properties.
Main Methods:
- Molecular beam epitaxy (MBE) of GeMnTe on BaF2 substrates.
- Variation of Mn concentration and growth temperatures.
- Analysis of phase formation and magnetic properties.
Main Results:
- Single-phase GeMnTe growth is restricted to a narrow window of conditions.
- Low and high temperatures lead to secondary phases or phase separation.
- Secondary phases significantly degrade magnetization and Curie temperatures.
Conclusions:
- Optimized MBE growth yields single-phase GeMnTe with Curie temperatures up to 200 K.
- High Mn concentrations (near 50%) are achievable under optimized conditions.
- Controlled growth is essential for realizing the potential of GeMnTe in spintronics.
