Related Experiment Video
Updated: May 30, 2026
09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Spatial nonuniformity in resistive-switching memory effects of NiO
Keisuke Oka1, Takeshi Yanagida, Kazuki Nagashima
1Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka 567-0047, Japan.
Journal of the American Chemical Society
|July 23, 2011
Summary
Researchers pinpointed the location of resistive switching (RS) in nickel oxide (NiO) junctions, finding it occurs near the cathode. This discovery is key for developing reliable nonvolatile memory devices.
Area of Science:
- Materials Science
- Solid-State Physics
- Nanotechnology
Background:
- Resistive switching (RS) in metal/NiO/metal junctions is a promising technology for next-generation nonvolatile memory.
- Understanding the precise location of RS mechanisms is crucial for improving device reliability, but remains incompletely understood.
Purpose of the Study:
- To identify the spatial location of bipolar resistive switching in nickel oxide (NiO) junctions.
- To provide insights into the mechanisms governing resistive switching for enhanced memory device design.
Main Methods:
- Fabrication of asymmetrically passivated planar NiO nanowire junctions.
- Electrical characterization to investigate resistive switching behavior.
- Analysis of switching location based on junction design.
Main Results:
- Successfully identified the spatial location of bipolar resistive switching in NiO.
- Demonstrated that resistive switching predominantly occurs near the cathode, not the anode.
- Provided experimental evidence supporting an electrochemical redox model involving ion migration.
Conclusions:
- The study clarifies the spatial switching location in NiO-based resistive switching devices.
- Findings suggest ion migration and p-type conduction are key factors in the observed cathode-localized switching.
- This knowledge is critical for the rational design of reliable and efficient nonvolatile memory technologies.
Related Concept Videos
01:25MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
00:51Non-ohmic Devices
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
01:27Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
01:16Biasing of P-N Junction
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
01:22MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
01:17Characteristics of MOSFET
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...