Related Experiment Video
Updated: May 30, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells
S A Lourenço1, M A T da Silva, I F L Dias
1Departamento de Engenharia de Materiais, Universidade Tecnológica Federal do Paraná-UTFPR, CEP 86812-460, Londrina-PR, Brazil.
Abstract:
The energy transitions of GaAsSbN/GaAs strained-layer single quantum wells (QWs), grown by molecular-beam epitaxy, are studied in detail, using photoluminescence (PL) and photoreflectance (PR) spectroscopies. The optical transitions energy observed in the PL and PR spectra of GaAsSbN/GaAs QWs show a strong decrease with a small increase in the N composition. These effects are explained through the interaction between the conduction band and a narrow resonant band formed by nitrogen states in the GaAsSbN alloy. The temperature dependence of ground-state energy of strained-layer QWs is analyzed using the Bose-Einstein relation in the temperature range from 9 to 295 K. The parameters that describe the temperature variations of the ground-state energies are evaluated and discussed.
Related Concept Videos
Atomic Spectroscopy: Effects of Temperature
At thermal equilibrium, the relative populations of excited and ground state atoms can be estimated using the Maxwell–Boltzmann distribution. For example, an increase in temperature from...
Effects of Temperature on Free Energy
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Effect of Temperature Change on Reaction Rate
UV–Vis Spectroscopy: Molecular Electronic Transitions
Phase Transitions

