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Updated: May 30, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Y Kanai1, R S Deacon, S Takahashi
1Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku 113-8656, Japan.
Electrical gating controls spin-orbit interaction in InAs quantum dots. This breakthrough enables tuning electron spin properties, crucial for advancing spintronics and quantum computing technologies.
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