First- and second-order wetting transitions in confined Ising films in the presence of nonmagnetic impurities: a...

In this work, we present the results of a systematic exploration of the effect caused by the introduction of nonmagnetic impurities (or defects) on the stabilization of the interface between two magnetic domains of opposite magnetic orientation. Those defects are simulated as spin vacancies along the center of confined two-dimensional Ising films, which have competing magnetic fields acting on the confinement walls. The calculations are performed for different L×M film sizes and by using the standard Metropolis dynamics. In the absence of defects, the film is characterized by an interface running along the M direction, which is induced by the competing surface fields. That interface undergoes a localization-delocalization transition that is the precursor of a true wetting transition taking place in the thermodynamic limit. When the density of defects is relatively low, our results show that the wetting phase transition is of second order, as in the absence of defects. On the other hand, when the density of nonmagnetic impurities is relatively high, a pinning effect of the interface gives rise to a first-order wetting phase transition. The observed transitions are characterized by measuring relevant properties, such as magnetization profiles, cumulants, magnetization fluctuations, etc., as a function of the density of defects. So, our main finding is that the presence of nonmagnetic impurities introduces a rich physical scenery, such as a line of second-order wetting transitions (observed for low density of defects) that merges into a first-order one just at a tricritical point. Precisely, these two latter findings are the major contributions of our study.