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Observation of dirac holes and electrons in a topological insulator
A A Taskin1, Zhi Ren, Satoshi Sasaki
1Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Japan.
Abstract:
We show that in the new topological-insulator compound Bi(1.5)Sb(0.5)Te(1.7)Se(1.3) one can achieve a surfaced-dominated transport where the surface channel contributes up to 70% of the total conductance. Furthermore, it was found that in this material the transport properties sharply reflect the time dependence of the surface chemical potential, presenting a sign change in the Hall coefficient with time. We demonstrate that such an evolution makes us observe both Dirac holes and electrons on the surface, which allows us to reconstruct the surface band dispersion across the Dirac point.
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