Related Experiment Video
Updated: May 30, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Electronic excited states in bilayer graphene double quantum dots
1JARA-FIT and II. Institute of Physics B, RWTH Aachen University, 52074 Aachen, Germany.
Abstract:
We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features additional energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable interdot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points over a large energy range. The obtained constant level spacing of 1.75 meV over a wide energy range is in good agreement with the expected single-particle energy spacing in bilayer graphene quantum dots. Finally, we investigate the evolution of the electronic excited states in a parallel magnetic field.
Related Concept Videos
The Electrical Double Layer
Valence Bond Theory
Deactivation Processes: Jablonski Diagram
Electron Paramagnetic Resonance (EPR) Spectroscopy: Organic Radicals
π Electron Effects on Chemical Shift: Overview
The Pauli Exclusion Principle

