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Related Experiment Video

Updated: May 30, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Pressure-mediated doping in graphene.

Jimmy Nicolle1, Denis Machon, Philippe Poncharal

  • 1Université de Lyon, F-69000, France.

Nano Letters
|August 3, 2011
PubMed
Summary
This summary is machine-generated.

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High pressure Raman spectroscopy reveals significant electron transfer in graphene immersed in alcohol. This leads to giant doping effects in monolayer and bilayer graphene, absent in trilayer samples.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene's electronic properties are sensitive to external stimuli.
  • Understanding substrate interactions is crucial for device applications.
  • High-pressure studies offer unique insights into material behavior.

Purpose of the Study:

  • To investigate the effect of high pressure on graphene supported on SiO(2).
  • To explore pressure-induced electron transfer and doping in few-layer graphene.
  • To analyze the transition in strain response from 2D to 3D with increasing layer number.

Main Methods:

  • Raman spectroscopy at high pressure.
  • Analysis of Raman spectral features (G-band, 2D-band).
  • Model calculations for graphene-SiO(2) interaction.

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Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
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Last Updated: May 30, 2026

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Published on: July 24, 2015

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Main Results:

  • Observed electron transfer (∂n/∂P ∼ 8 × 10(12) cm(-2) GPa(-1)) in monolayer and bilayer graphene immersed in alcohol.
  • Achieved giant doping levels (n ∼ 6 × 10(13) cm(-2)) at 7 GPa.
  • Identified absence of charge transfer in trilayer graphene and in non-polar solvents (argon, nitrogen).
  • Observed a phase transition from 2D biaxial strain to 3D hydrostatic compression from bilayer to trilayer graphene.
  • Related this transition to the unbinding of the graphene-SiO(2) system.

Conclusions:

  • Substrate-mediated charge transfer, potentially via silanol groups on SiO(2), induces significant doping in few-layer graphene under specific conditions.
  • The number of graphene layers and substrate properties dictate the strain response and interaction dynamics.
  • Graphene's doping behavior is highly tunable by environmental and substrate interactions.