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Updated: May 30, 2026

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
Published on: August 19, 2016
Fabrication of Bragg gratings in subwavelength diameter As2Se3 chalcogenide wires
Raja Ahmad1, Martin Rochette, Chams Baker
1Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7, Canada. raja.ahmad@mail.mcgill.ca
Abstract:
The inscription of Bragg gratings in chalcogenide (As(2)Se(3)) wires with subwavelength diameter is proposed and demonstrated. A modified transverse holographic method employing He-Ne laser light at a wavelength of λ(w)=633 nm allows the writing of Bragg grating reflectors in the 1550 nm band. The gratings reach an extinction ratio of 40 dB in transmission and a negative photo-induced index change of Δn ∼ 10(-2). The inscription of Bragg gratings in chalcogenide microwires will enable the fabrication of new devices with applications in nonlinear optics and sensing in the near- to mid-IR region of wavelengths.

