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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
K C Nowack1, M Shafiei, M Laforest
1Kavli Institute of Nanoscience, Delft University of Technology, Post Office Box 5046, 2600 GA Delft, Netherlands. k.c.nowack@tudelft.nl
We achieved independent single-shot readout of two electron spins in a double quantum dot, enabling efficient characterization of multiqubit quantum circuits. This breakthrough in quantum information processing demonstrates high-fidelity two-qubit gate operations.
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