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Related Experiment Video

Updated: May 30, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Published on: January 19, 2018

Tunnelling spin current and spin diode behaviour in a bilayer system.

Pei-Qing Jin¹, You-Quan Li

¹Zhejiang Institute of Modern Physics and Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China.

Journal of Physics. Condensed Matter : an Institute of Physics Journal

|August 6, 2011

Summary

We investigated coherent tunnelling spin current in bilayer systems with spin-orbit coupling. Asymmetric tunnelling spin conductivity was observed due to differing impurity potentials between layers.

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Area of Science:

Condensed matter physics
Spintronics
Quantum mechanics

Background:

Spin-orbit coupling is crucial for spintronic devices.
Tunnelling currents are fundamental to quantum transport.
Bilayer systems offer unique electronic properties.

Purpose of the Study:

To investigate coherent tunnelling spin current in bilayer systems.
To analyze the influence of spin-orbit coupling and impurities.
To understand the linear response to electric fields.

Main Methods:

Continuity-like equations were employed.
Wavefunction overlaps were analyzed for tunnelling current definition.
Linear response theory was applied to electric fields.
Nonmagnetic impurity effects were incorporated.

Main Results:

Wavefunction overlaps between layers contribute to tunnelling current.
Tunnelling spin conductivity shows asymmetry with gate voltage.
Asymmetry arises from differing impurity potential strengths in each layer.

Conclusions:

The study provides a theoretical framework for tunnelling spin currents in bilayer systems.
Spin-orbit coupling and impurity scattering significantly affect spin transport.
Asymmetric conductivity offers potential for novel spintronic device applications.