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Overlap population diagram for ELNES and XANES: peak assignment and interpretation
1Institute of Engineering Innovation, The University of Tokyo, Yayoi, Bunkyo, Tokyo 113-8656, Japan.
Abstract:
This article reviews overlap population (OP) diagrams for electron energy loss near-edge structure (ELNES) and x-ray absorption near-edge structure (XANES). By using the OP diagrams, peaks in ELNES and XANES of MgO, ZnO, AlN, GaN, InN, and YBa(2)Cu(3)O(7-x) are interpreted in terms of cation-anion and cation-cation interactions. Common features are found in the OP diagrams for different edges. A reconstruction of the unoccupied electronic structure is demonstrated by aligning the different edges with the common features in the OP diagrams. The OP diagram is also applied to the Cu/Al(2)O(3) hetero-interface to find the relationships among ELNES, atomic and electronic structures, and properties.
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