Related Experiment Video
Updated: May 30, 2026

Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals
Published on: May 29, 2018
Electronic structure of CoSi(2) films on Si(111) studied using time-resolved two-photon photoemission
M Kutschera1, T Groth, C Kentsch
1Lehrstuhl für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstraße 7, 91058 Erlangen, Germany.
Abstract:
The occupied and unoccupied electronic structure of thin epitaxial CoSi(2) films grown on Si(111) substrates was studied using time-resolved two-photon photoemission and valence-band photoemission spectroscopy. The work function of the sample surfaces and the Schottky barrier height at the metal-semiconductor interface were measured as a function of annealing temperature. The photoemission data reveal several occupied and unoccupied electronic states which exhibit a high sensitivity to the annealing temperature. Time-resolved measurements show a behavior typical for a short-lived hot-electron gas and indications for an image-potential resonance.
Related Concept Videos
2D NMR: Homonuclear Correlation Spectroscopy (COSY)
2D NMR: Overview of Homonuclear Correlation Techniques
COSY90 is the standard two-dimensional (2D) COSY experiment that...
Photochemical Electrocyclic Reactions: Stereochemistry
Selection Rules: Photochemical Activation

