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Published on: October 12, 2019
Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity
Zhi-Gang Chen1, Jin Zou, Gang Liu
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China. ARC Centre of Excellence for Functional Nanomaterials, School of Engineering and Australian Institute of Bioengineering and Nanotechnology, The University of Queensland, QLD 4072, Australia.
Abstract:
Oriented ZnS nanobelts were grown on an Si substrate using hydrogen-assisted thermal evaporation under moist gas conditions. It was found that these ZnS nanobelts had a single crystal hexagonal wurtzite structure growing along the [0001] direction. They had a rectangular cross section with lengths of up to tens of micrometres, a typical width of 50-150 nm, and a thickness of ∼40 nm. A silicon-induced vapour-liquid-solid process was proposed for the formation of the ZnS nanobelts and their assembly. These oriented nanobelts have much faster response time to hydrogen gas than that of pure ZnO and Pd-sensitized ZnO, showing excellent hydrogen sensing properties.
