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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
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Multiplexed SOI BioFETs.

Aleksandar Vacic1, Jason M Criscione, Eric Stern

  • 1Department of Electrical, Yale University, 15 Prospect St., New Haven, CT 06511, USA. aleksandar.vacic@yale.edu

Biosensors & Bioelectronics
|August 9, 2011
PubMed
Summary
This summary is machine-generated.

This study introduces an internal calibration method for nanoscale field effect sensors, enabling quantitative measurements without individual sensor calibration. Utilizing initial current rates improves accuracy for ultrasensitive diagnostic applications.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Sensor Technology

Background:

  • Nanoscale Field Effect Transistors (NFETs) offer high sensitivity for unlabeled diagnostics.
  • Quantitative sensing with NFETs is hindered by the need for individual sensor calibration.

Purpose of the Study:

  • To develop an internal calibration scheme for multiplexed nanoribbon field effect sensors.
  • To enable quantitative measurements using NFETs without device-specific calibration.

Main Methods:

  • Utilized initial current rates for calibration, moving beyond end-point detection.
  • Employed top-down fabrication techniques for nanoribbon field effect sensors.
  • Performed multiplexed sensor measurements.

Main Results:

  • Demonstrated a linear sensor response consistent with initial binding kinetics.
  • Achieved reproducible device results with minimal fluctuations using top-down fabrication.
  • Successfully implemented an internal calibration scheme.

Conclusions:

  • Internal calibration using initial current rates is feasible for nanoribbon field effect sensors.
  • Reproducible fabrication enables reliable quantitative sensing.
  • This approach enhances the utility of NFETs in diagnostic applications.