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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Electromagnetic pulse-driven spin-dependent currents in semiconductor quantum rings.

Zhen-Gang Zhu1, Jamal Berakdar

  • 1Institut für Physik, Martin-Luther Universität Halle-Wittenberg, Heinrich-Damerow-Straße 4 06120 Halle, Germany.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|August 10, 2011
PubMed
Summary
This summary is machine-generated.

We studied quantum ring currents driven by electromagnetic pulses. Rashba spin-orbit interaction and pulse parameters control charge and spin currents, with larger rings showing longer oscillation periods.

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Area of Science:

  • Condensed Matter Physics
  • Quantum Mechanics
  • Spintronics

Background:

  • Quantum rings are crucial in nanoscale electronics.
  • Spin-orbit interaction (SOI) significantly influences electron behavior in quantum systems.
  • Understanding non-equilibrium dynamics is key for advanced quantum devices.

Purpose of the Study:

  • To investigate non-equilibrium charge and spin-dependent currents in a quantum ring.
  • To analyze the role of Rashba spin-orbit interaction (SOI) and external magnetic flux.
  • To explore the influence of asymmetric electromagnetic pulses on current dynamics.

Main Methods:

  • Theoretical investigation of quantum transport in a nanoscale ring.
  • Modeling the system's response to two asymmetric picosecond electromagnetic pulses.
  • Analysis of both equilibrium and non-equilibrium persistent charge and spin currents.

Main Results:

  • Dynamical charge and spin currents vary smoothly with static external magnetic flux.
  • Rashba SOI acts as an effective SU(2) flux, modifying current phases.
  • Oscillation period of charge current depends on ring radius and pulse delay time.
  • Pulse field parameters offer a degree of control over total charge and spin currents.

Conclusions:

  • The study elucidates the complex interplay between SOI, external fields, and electromagnetic pulses in quantum rings.
  • Findings are applicable to nanometre rings in III-V and II-VI semiconductor heterojunctions.
  • Provides insights for designing and controlling spintronic devices based on quantum rings.