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Related Concept Videos

Oxidative Cleavage of Alkenes: Ozonolysis01:46

Oxidative Cleavage of Alkenes: Ozonolysis

In ozonolysis, ozone is used to cleave a carbon–carbon double bond to form aldehydes and ketones, or carboxylic acids, depending on the work-up.
Ozone is a symmetrical bent molecule stabilized by a resonance structure.
Oxidation of Alkenes: Syn Dihydroxylation with Osmium Tetraoxide02:44

Oxidation of Alkenes: Syn Dihydroxylation with Osmium Tetraoxide

Alkenes are converted to 1,2-diols or glycols through a process called dihydroxylation. It involves the addition of two hydroxyl groups across the double bond with two different stereochemical approaches, namely anti and syn. Dihydroxylation using osmium tetroxide progresses with syn stereochemistry.
Oxidation of Alcohols02:37

Oxidation of Alcohols

In this lesson, the oxidation of alcohols is discussed in depth. The various reagents used for oxidation of primary and secondary alcohols are detailed, and their mechanism of action is provided.
The process of oxidation in a chemical reaction is observed in any of the three forms:
Oxidation of Alkenes: Syn Dihydroxylation with Potassium Permanganate02:21

Oxidation of Alkenes: Syn Dihydroxylation with Potassium Permanganate

Alkenes can be dihydroxylated using potassium permanganate. The method encompasses the reaction of an alkene with a cold, dilute solution of potassium permanganate under basic conditions to form a cis-diol along with a brown precipitate of manganese dioxide.
Oxidation of Alkenes: Anti Dihydroxylation with Peroxy Acids02:04

Oxidation of Alkenes: Anti Dihydroxylation with Peroxy Acids

Diols are compounds with two hydroxyl groups. In addition to syn dihydroxylation, diols can also be synthesized through the process of anti dihydroxylation. The process involves treating an alkene with a peroxycarboxylic acid to form an epoxide. Epoxides are highly strained three-membered rings with oxygen and two carbons occupying the corners of an equilateral triangle. This step is followed by ring-opening of the epoxide in the presence of an aqueous acid to give a trans diol.
Radical Autoxidation01:20

Radical Autoxidation

The oxidation of an organic compound in the presence of air or oxygen is called autoxidation. For example, cumene reacts with oxygen to form hydroperoxide. Autoxidation involves initiation, propagation, and termination steps. Many organic compounds are susceptible to autoxidation—especially ethers in the presence of oxygen, which form hydroperoxides. Even though this reaction is slow, old ether bottles contain small amounts of peroxide, which leads to laboratory explosions during ether...

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Related Experiment Video

Updated: May 30, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
08:48

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

Silicon oxidation by ozone.

Christian K Fink1, Ken Nakamura, Shingo Ichimura

  • 1Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, UK.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|August 10, 2011
PubMed
Summary
This summary is machine-generated.

Ozone oxidation offers a low-temperature, damage-free method for silicon oxidation. Ozone-grown silicon dioxide (SiO2) shows superior interface and electrical properties compared to dioxygen-grown oxide.

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Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
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Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

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Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
08:48

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
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Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
12:38

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

Published on: December 16, 2011

Area of Science:

  • Materials Science
  • Surface Chemistry
  • Semiconductor Physics

Background:

  • Silicon oxidation is crucial for semiconductor manufacturing.
  • Traditional methods face challenges at low temperatures.
  • Ozone (O3) is emerging as a promising alternative oxidant.

Purpose of the Study:

  • To review the key findings on ozone-based silicon oxidation.
  • To discuss ozone generation methods and interface advantages.
  • To highlight the importance of understanding growth characteristics.

Main Methods:

  • Review of existing literature on ozone oxidation of silicon.
  • Analysis of different ozone generation techniques.
  • Comparison of ozone-grown vs. dioxygen-grown Si/SiO2 interfaces.

Main Results:

  • Ozone enables low-temperature, damage-free silicon oxidation.
  • Ozone-grown oxides exhibit enhanced interface and electrical properties.
  • Understanding growth characteristics is key for process control.

Conclusions:

  • Ozone is a viable alternative oxidant for silicon.
  • Ozone oxidation offers significant advantages for Si/SiO2 interface quality.
  • Further research into growth dynamics will optimize the process.