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Updated: May 30, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Superfluorescent pulsed emission from biexcitons in an ensemble of semiconductor quantum dots
K Miyajima1, Y Kagotani, S Saito
1Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama, Japan.
Abstract:
Picosecond time-resolved photoluminescence from biexcitons in CuCl quantum dots (QDs) embedded in a NaCl matrix has been measured using an optical Kerr gate method. Ultrafast pulsed emission from the biexciton states was observed for the first time, only under resonant two-photon excitation of biexcitons. This implies that complete population inversion between the biexciton and exciton states is necessary in order to trigger the pulsed emission. In addition, the nature of the dependence of the time profiles of the pulsed emission on the excitation intensity reveals that the peak intensity is directly proportional to the square of the number of excited QDs. We conclude that this phenomenon is caused by superfluorescence, that is, the cooperative spontaneous radiative decay of many isolated excited states coupled by a resonant electromagnetic wave. Such a phenomenon has been observed for the first time in an ensemble of semiconductor QDs in this study. The results presented in this paper show that it is possible to control the microscopic coherent dynamics of electronic excited states in a QD ensemble.
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