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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

Intrinsic mobility in graphene.

R S Shishir1, D K Ferry

  • 1Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287, USA.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|August 10, 2011
PubMed
Summary
This summary is machine-generated.

High dielectric constant solvents significantly screen impurities in graphene, boosting room temperature mobility by orders of magnitude. This research confirms the intrinsic phonon-limited mobility in graphene, reaching up to 44,000 cm^2/Vs.

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Area of Science:

  • Condensed matter physics
  • Materials science

Background:

  • Graphene exhibits high electron mobility, but it is often limited by impurity scattering at room temperature.
  • Dielectric screening is a known method to mitigate impurity effects in electronic materials.

Purpose of the Study:

  • To investigate the impact of high dielectric constant solvents on graphene's room temperature transport properties.
  • To determine the intrinsic, phonon-limited mobility of graphene at room temperature.

Main Methods:

  • Experimental measurements of graphene mobility using high K dielectric solvents.
  • Computational simulations to confirm experimental findings and understand scattering mechanisms.

Main Results:

  • Mobility increased by orders of magnitude due to dielectric screening of impurities.
  • Achieved a maximum mobility of 44,000 cm^2/Vs.
  • Impurity scattering remains dominant at very low carrier densities but is significantly reduced.

Conclusions:

  • High K dielectric solvents effectively screen impurities, enabling near-intrinsic phonon-limited mobility in graphene at room temperature.
  • Dielectric screening is a crucial factor for optimizing graphene-based electronic devices operating at room temperature.