Modelling of multi-wall CNT devices by self-consistent analysis of multichannel transport

Area of Science:

• Physics
• Materials Science
• Electrical Engineering

Background:

• Carbon nanotube field-effect transistors (CNTs FETs) are promising for advanced electronics.
• Understanding charge transport in multi-wall CNTs (mwCNTs) is crucial for device optimization.
• Existing models often simplify the complex carrier dynamics within mwCNTs.

Purpose of the Study:

• To generalize self-consistent analysis for coherent carrier transport in mwCNT FETs.
• To quantify the impact of multi-wall and multi-band effects on charge diffusion.
• To provide a comprehensive numerical analysis of mwCNT FET performance.

Main Methods:

• Utilized transmission line formalism to solve the Schrödinger equation for carrier propagation.
• Coupled Schrödinger equation with Poisson equation for spatial voltage distribution.
• Performed detailed numerical simulations for semiconducting mwCNTs.

Main Results:

• Charge diffusion contribution from different walls and sub-bands is non-negligible in mwCNT FETs.
• This effect is particularly pronounced at high applied voltages and larger diameters.
• Provided detailed current-voltage characteristics and frequency responses for various mwCNT dimensions.

Conclusions:

• The generalized analysis accurately captures complex carrier transport in mwCNT FETs.
• Multi-wall and multi-band effects must be considered for accurate modeling and design.
• Results offer valuable insights for developing high-performance CNT-based electronic devices.