Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis

We present a simple and scalable technique for the fabrication of solution processed and local-gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on the directed assembly of individual single-walled carbon nanotubes from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle. Local-gated CNT-FET devices display superior performance compared to a global back gate with on-off ratios >10(4) and maximum subthreshold swings of 170 mV/dec. The local bottom-gated DEP-assembled CNT-FETs will facilitate large-scale fabrication of complementary metal-oxide-semiconductor (CMOS) compatible nanoelectronic devices.