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Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using
1Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China. Mesophotonics Limited, Hsinchu 300, Taiwan, Republic of China.
Abstract:
Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.
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