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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
The Electrical Double Layer01:30

The Electrical Double Layer

In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Related Experiment Video

Updated: May 30, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Gate-controlled charge transfer in Si:P double quantum dots.

F E Hudson1, A J Ferguson, C C Escott

  • 1Centre for Quantum Computer Technology, Schools of Physics and Electrical Engineering, University of New South Wales, NSW 2052, Australia.

Nanotechnology
|August 10, 2011
PubMed
Summary
This summary is machine-generated.

We demonstrate charge sensing in nanoscale silicon double dots created by phosphorus implantation. These results pave the way for smaller, highly functional quantum computing devices.

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

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Last Updated: May 30, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Area of Science:

  • Quantum Computing
  • Solid-State Physics
  • Nanotechnology

Background:

  • Advancements in quantum computing require precise control over quantum bits (qubits).
  • Semiconductor-based quantum computing platforms offer scalability and integration potential.

Purpose of the Study:

  • To investigate the charge sensing properties of nanoscale phosphorus-implanted double dots in silicon.
  • To assess the viability of these structures for future quantum information processing applications.

Main Methods:

  • Fabrication of nanoscale double dots using phosphorus implantation in silicon.
  • Low-temperature charge sensing measurements.
  • Utilizing a coupled single-electron transistor for monitoring dot occupancy.
  • Capacitance modeling for structure analysis.

Main Results:

  • Observation of a charge stability diagram consistent with a many-electron double-dot system.
  • Experimental results align well with capacitance modeling predictions.
  • Successful control and monitoring of dot occupancy.

Conclusions:

  • The fabricated phosphorus-implanted double dots exhibit characteristics suitable for quantum applications.
  • These findings contribute to the development of smaller, more efficient charge or spin qubits.
  • The study highlights the potential of silicon-based quantum computing architectures.