Molecular-beam epitaxy-grown Si whisker structures: morphological, optical and electrical properties

Scanning electron microscopy, spectroscopic ellipsometry, and current-voltage and current-temperature measurements were employed to characterize nanowhisker structures grown by molecular-beam epitaxy on Si(111) substrates. Small clusters of gold deposited on the Si surface were used as the seeds for nanowhisker growth. The diameter of grown nanowhiskers and their length ranged from 70 to 200 nm and from 580 to 890 nm, respectively. The whiskers were found to inherit the (111) orientation of the Si substrate. By means of spectroscopic ellipsometry in the range 1.5-4.77 eV, lateral optical inhomogeneity of the nanowhisker layer was revealed, with optical properties of the layer substantially differing from those of single-crystal Si. Electrical measurements point to the presence of a Schottky barrier with height 0.70 eV in the structure and to the presence of electrically active centers non-uniformly distributed over the nanowhisker length.