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Updated: May 30, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Accessing the transport properties of graphene and its multilayers at high carrier density
Jianting Ye1, Monica F Craciun, Mikito Koshino
1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan. yejianting@ap.t.u-tokyo.ac.jp
Abstract:
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10(14) cm(-2). Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
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Electrical Transport

