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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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First-principles study of crystalline and amorphous Ge(2)Sb(2)Te(5) and the effects of stoichiometric defects

S Caravati1, M Bernasconi, T D Kühne

  • 1Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R Cozzi 53, I-20125, Milano, Italy. Department of Chemistry and Applied Biosciences, ETH Zurich, USI Campus, Via Giuseppe Buffi 13, CH-6900 Lugano, Switzerland.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|August 11, 2011
PubMed

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