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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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The effects of electronic field on the atomic structure of the graphene/α-SiO(2) interface

Z M Ao1, W T Zheng, Q Jiang

  • 1Key Laboratory of Automobile Materials, Ministry of Education, Jilin University, Changchun 130025, People's Republic of China. Department of Materials Science and Engineering, Jilin University, Changchun 130025, People's Republic of China.

Nanotechnology
|August 11, 2011
PubMed

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