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Updated: May 30, 2026

Synthesis, Assembly, and Characterization of Monolayer Protected Gold Nanoparticle Films for Protein Monolayer Electrochemistry
Published on: October 4, 2011
Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer
Hyejung Choi1, Byung-Sang Choi, Tae-Wook Kim
1Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #261, Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Korea.
Abstract:
A self-assembled monolayer of Pt nanoparticles (NPs) was studied as a charge trapping layer for non-volatile memory (NVM) applications. Pt NPs with a narrow size distribution (diameter ∼4 nm) were synthesized via an alcohol reduction method. The monolayer of these Pt NPs was immobilized on a SiO(2) substrate using poly(4-vinylpyridine) (P4VP) as a surface modifier. A metal-oxide-semiconductor (MOS) type memory device with Pt NPs exhibits a relatively large memory window of 5.8 V under ± 7 V for program/erase voltage. These results indicate that the self-assembled Pt NPs can be utilized for NVM devices.

