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Related Experiment Video

Updated: May 30, 2026

Fabrication of High Contrast Gratings for the Spectrum Splitting Dispersive Element in a Concentrated Photovoltaic System
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Manipulating feature sizes in Si-based grating structures by thermal oxidation.

Xin Chen1, Ran Ji, Ning Dai

  • 1National Key Lab of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.

Nanotechnology
|August 11, 2011
PubMed
Summary
This summary is machine-generated.

This study introduces a novel thermal oxidation method to precisely control feature sizes in silicon (Si) grating structures. This technique enables the creation of high and low fin width/period ratios previously unattainable with laser interference lithography.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Laser interference lithography is a key technique for fabricating silicon (Si) grating structures.
  • Achieving extreme fin width/period ratios with traditional methods is challenging.

Purpose of the Study:

  • To develop a new method for manipulating feature sizes in Si-based gratings.
  • To achieve fin width/period ratios not directly accessible by laser interference lithography.

Main Methods:

  • Utilizing the volume expansion of silicon during thermal oxidation.
  • Fabricating Si-based gratings with controlled feature sizes.
  • Employing subsequent chemical etching of the oxide layer.

Main Results:

  • Achieved very high fin width/period ratios of approximately 0.96.
  • Obtained grating structures with fin width/period ratios as low as ~0.06 after etching.
  • Demonstrated precise control over feature size manipulation in Si gratings.

Conclusions:

  • Thermal oxidation offers a versatile approach to tune feature sizes in Si gratings.
  • This method expands the accessible range of fin width/period ratios for nanostructure fabrication.
  • The technique provides a pathway for advanced Si-based nanophotonic and nanoelectronic devices.