Manipulating feature sizes in Si-based grating structures by thermal oxidation
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Published on: July 18, 2015
1National Key Lab of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
Abstract:
We report a method for manipulating feature sizes in Si-based grating structures by thermal oxidation, which allows the realization of fin width/period ratios not directly accessible by laser interference lithography. Taking advantage of the expansion in volume associated with the thermal oxidation of Si, grating structures with very high fin width/period ratios of the order of 0.96 were obtained, whereas subsequent chemical etching of the oxide yields grating structures with fin width/period ratios as small as ∼0.06.
