ZnO single-crystal films fabricated by the oxidation of zinc-implanted sapphire
1Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, People's Republic of China. Department of Physics, Wuhan University, Wuhan 430072, People's Republic of China.
Abstract:
Zinc oxide single-crystal films are prepared by the oxidation of zinc-implanted sapphire at 700 °C for 2 h in oxygen ambient. The cross-section transmission electron microscopy image and the selected-area electron diffraction (SAED) pattern show that ZnO single-crystal films are formed on the surface of the zinc-implanted sapphire substrate. The quality and excitonic properties of the single-crystal ZnO films are studied through absorption spectra, the photoluminescence spectra and resonant Raman spectrum. The mechanisms for the formation of single-crystal ZnO films are discussed.
