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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

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Related Experiment Video

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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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Field effect transistor from individual trigonal Se nanowire.

Donghuan Qin1, Hong Tao, Yun Zhao

  • 1Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Special Functional Materials, South China University of Technology, Guangzhou 510640, People's Republic of China.

Nanotechnology
|August 11, 2011
PubMed
Summary

High-yield chemical synthesis produced trigonal selenium nanowires (NWs). These p-type semiconductor NWs exhibit high mobility, crucial for future nanoelectronic devices.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Selenium nanowires (NWs) are promising nanomaterials for electronic applications.
  • Understanding their growth and electronic properties is essential for device fabrication.

Purpose of the Study:

  • To fabricate trigonal selenium nanowires (NWs) using a chemical solution process.
  • To characterize their morphology, structure, and semiconductor properties.
  • To evaluate their potential for nanoelectronic devices.

Main Methods:

  • High-yield chemical solution process for NW synthesis.
  • Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) for morphology and structure analysis.
  • X-ray diffraction (XRD) for crystallographic identification.
  • Fabrication of single NW field-effect transistor (FET) devices using photolithography.

Main Results:

  • Trigonal Se NWs were successfully synthesized with high yield.
  • NWs were confirmed to grow along the crystallographic c-axis, parallel to helical Se atom chains.
  • Single Se NW FETs demonstrated p-type semiconductor behavior.
  • Achieved carrier mobility up to 30 cm(2) V(-1) s(-1) in the Se NWs.

Conclusions:

  • The study successfully fabricated and characterized trigonal selenium nanowires.
  • The demonstrated p-type semiconducting behavior and mobility are promising for nanoelectronic applications.
  • These findings provide fundamental insights for developing high-quality NW FETs and other selenium-based electronic devices.