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p-type doping of graphene with F4-TCNQ

H Pinto1, R Jones, J P Goss

  • 1School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, UK.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|August 12, 2011
PubMed

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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...