Related Experiment Video
Updated: May 30, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Structure determination of Bi/Ge(111)-[Formula: see text] by dynamical low-energy electron diffraction analysis and
Yoshiyuki Ohtsubo1, Shinichiro Hatta, Manabu Iwata
1Department of Chemistry, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan. JST CREST, Saitama 332-0012, Japan.
Abstract:
We have determined the atomic structure of the Bi/Ge(111)-[Formula: see text] surface by dynamical low-energy electron diffraction (LEED) analysis and scanning tunneling microscopy (STM). The optimized atomic structure consists of Bi atoms which are adsorbed near the T(1) sites of the bulk-truncated Ge(111) surface and form triangular trimer units centered at the T(4) sites. The atomically resolved STM image was consistent with the LEED result. The structural parameters agree well with those optimized by a first-principles calculation which supports the interpretation of the electronic band splitting on this surface in terms of the giant Rashba effect.
Related Concept Videos
Determination of Crystal Structures
X-ray Diffraction of Biological Samples
According to Bragg's law, when X-rays strike the sample positioned on a stage, the rays are scattered by the electron clouds around the sample atoms. The X-ray diffraction or scattering is caused by constructive interference of the X-ray waves that reflect off the internal crystal...
X-ray Crystallography
Diffraction
Diffraction is the change in the direction of travel experienced by an electromagnetic wave when it encounters a physical barrier whose dimensions are comparable to those of the wavelength of the light. X-rays are electromagnetic radiation with wavelengths about as long as the distance between neighboring...

