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Updated: May 30, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Nanogroove formation by ion irradiation on indentation-modified amorphous SiO(2)
1Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Japan. National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan.
Abstract:
Ion beams are widely used for micro/nanostructure fabrication with unique features of the energetic processes. In this work, we present a self-assembled nanostructure fabrication by ion irradiation with a patterned strain/stress field. The patterned strain/stress field is introduced by micro-Vickers indentation to amorphous SiO(2) (load = 100 mN). After irradiation of 60 keV Cu(-) ions, nanogrooves (width from 150 to 250 nm) were created at the indentation edge. Under the ion irradiation of a constant ion flux, the nanogroove size linearly increased with ion fluence from 2 × 10(16) to 1.2 × 10(17) ions cm(-2). Comparison of indented samples after irradiation and thermal annealing suggests that the nanogrooving originates from ion beam interactions with residual stress/strain by indentation and that a non-thermal effect results from the ion irradiation processes. Cross-sectional TEM analysis showed that the grooves extend over 200 nm below the surface, implying that the groove growth is not caused by surface diffusion. It is concluded from the results that the grooving is due to irradiation-induced mass transport accompanied by vacancy aggregation at the interface between the indented and non-indented areas.
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