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Atomic Emission Spectroscopy: Instrumentation

Atomic Emission Spectroscopy: Instrumentation

The instrumentation of atomic emission spectrometry (AES) involves various components, including atomization devices that convert samples into gas-phase atoms and ions. There are two main types of atomization devices: continuous and discrete atomizers. Continuous atomizers, like plasmas and flames, introduce samples in a constant stream, while discrete atomizers inject individual samples using syringes or autosamplers. The most common discrete atomizer is the electrothermal atomizer.

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AES is a powerful analytical technique, especially effective when used with plasma sources, producing abundant spectra in characteristic emission lines. The Inductively Coupled Plasma (ICP), in particular, yields superior quantitative analytical data due to its high stability, low noise, low background, and minimal interferences under optimal experimental conditions. However, newer air-operated microwave sources are emerging as promising alternatives that could be more cost-effective than...

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Related Experiment Video

Updated: May 30, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Probing C₈₄-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

Ballistic electron emission spectroscopy on Ag/Si devices.

A Bannani¹, C A Bobisch, M Matena

¹Department of Physics, Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47048 Duisburg, Germany.

|August 12, 2011

Summary

Ballistic electron emission spectroscopy (BEES) reveals significant differences in Schottky barrier heights between epitaxial silver films and polycrystalline films on silicon surfaces. Interface properties strongly influence these barrier heights.

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Area of Science:

Solid State Physics
Materials Science
Surface Science

Background:

Schottky barrier height is a critical parameter in semiconductor device performance.
Understanding interface effects is crucial for controlling electronic properties.

Purpose of the Study:

To investigate Schottky barrier heights on silver/silicon interfaces using Ballistic Electron Emission Spectroscopy (BEES).
To compare barrier heights for epitaxial versus polycrystalline silver films on different silicon reconstructions.

Main Methods:

Ballistic Electron Emission Spectroscopy (BEES) performed at low temperatures in ultra-high vacuum (UHV).
Growth of epitaxial and polycrystalline silver films on Si(111) and Si(100) surfaces with varying reconstructions.

Main Results:

Schottky barrier heights were successfully evaluated using BEES.
Epitaxial silver films exhibited substantially different barrier heights compared to polycrystalline films.
Significant influence of the interface structure on barrier height was observed.

Conclusions:

The interface structure plays a dominant role in determining Schottky barrier heights.
BEES is a powerful technique for probing electronic properties at metal-semiconductor interfaces.
Results highlight the importance of controlled film growth for electronic applications.