The tunable bistable and multistable memory effect in polymer nanowires
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Updated: May 30, 2026
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Atikur Rahman1, Milan K Sanyal
1Surface Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064, India.
Abstract:
Tunable bistable and multistable resistance switching in conducting polymer nanowires has been reported. These wires show reproducible switching transition under several READ-WRITE-ERASE cycles. The switching is observed at low temperature and the ON/OFF resistance ratio for the voltage biased switching transition was found to be more than 10(3). Current biased measurements show lower ON/OFF ratio and some of the nanowires exhibit a multistable switching transition in current biased measurements. The threshold voltage for switching and the ON/OFF resistance ratio can be tuned by changing doping concentration of the nanowires.
