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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Nanostructural control in solution-derived epitaxial Ce(1-x)Gd(x)O(2-y) films
M Coll1, J Gázquez, F Sandiumenge
1Institut de Ciència de Materials de Barcelona, CSIC Campus de la UAB, E-08193 Bellaterra, Catalonia, Spain.
Nanotechnology
|August 12, 2011
Summary
Aliovalent doping of ceria films with gadolinium (Gd3+) cations enables fine-tuning of nanostructure and surface topography. This doping strategy facilitates the growth of high-quality epitaxial ceria films by mitigating grain boundary inhibition.
Area of Science:
- Materials Science
- Thin Film Growth
- Nanostructure Engineering
Background:
- Non-doped ceria films exhibit polycrystalline structures under reducing conditions due to an amorphous Ce2C3 phase inhibiting grain growth.
- Controlling nanostructure and surface topography is crucial for advanced material applications.
Purpose of the Study:
- To report a novel aliovalent doping mechanism for controlling ceria film nanostructure and surface topography.
- To achieve high-quality epitaxial ceria films via doping.
Main Methods:
- Solution-derived ceria film deposition.
- Aliovalent doping with gadolinium (Gd3+) cations.
- Analysis of grain growth, nanostructure, and surface morphology.
Main Results:
- Gd3+ doping enables the formation of high-quality epitaxial ceria films.
- Doping introduces charge-compensating oxygen vacancies that reduce grain boundary motion barriers.
- The amorphous Ce2C3 phase is expelled to the film surface, purifying the nanostructure.
- Epitaxial film surface morphology is governed by faceting and truncation phenomena.
Conclusions:
- Aliovalent doping is an effective strategy for tailoring ceria film nanostructure and surface properties.
- Gadolinium doping facilitates the growth of defect-free epitaxial ceria films.
- Understanding the interplay of doping, vacancies, and surface energy is key to controlling film morphology.
