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Updated: May 30, 2026
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires
J M Ulloa1, P M Koenraad, D Fuster
1Department of Applied Physics, Eindhoven University of Technology, PO Box 513, NL-5600MB Eindhoven, The Netherlands.
Abstract:
The growth mechanism of stacked InAs/InP(001) quantum wires (QWRs) is studied by combining an atomic-scale cross-sectional scanning tunnelling microscopy analysis with in situ and in real-time stress measurements along the [110] direction (sensitive to stress relaxation during QWR formation). QWRs in stacked layers grow by a non-Stranski-Krastanov (SK) process which involves the production of extra InAs by strain-enhanced As/P exchange and a strong strain driven mass transport. Despite the different growth mechanism of the QWR between the first and following layers of the stack, the QWRs maintain on average the same shape and composition in all the layers of the stack, revealing the high stability of this QWR configuration.
