Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Search research articles

Related Experiment Video

Updated: May 30, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

Precursor evaluation for in situ InP nanowire doping.

M T Borgström¹, E Norberg, P Wickert

¹Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.

|August 12, 2011

Summary

Researchers developed a method to create both n-type and p-type Indium Phosphide (InP) nanowires using tetraethyltin (TESn) and dimethylzinc (DMZn). These doped nanowires enable the fabrication of functional pn-junctions and light-emitting diodes.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

A cathodoluminescence study of InP/InGaP axially heterostructured NWs for tandem solar cells.

Nanotechnology·2024

Same author

Strong coupling between a microwave photon and a singlet-triplet qubit.

Nature communications·2024

Same author

Short communication: Heterosis and breed effects for milk production and udder health traits in crosses between Danish Holstein, Danish Red, and Danish Jersey.

Journal of dairy science·2020

Same author

Electrical control of spins and giant g-factors in ring-like coupled quantum dots.

Nature communications·2019

Same author

Estimation of genetic parameters for young stock survival in beef x dairy crossbred calves.

Animal : an international journal of animal bioscience·2019

Same author

Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.

Nano letters·2019

Area of Science:

Semiconductor Nanowire Synthesis
Materials Science
Nanotechnology

Background:

Indium Phosphide (InP) nanowires are promising for electronic and optoelectronic applications.
Precise control over doping is crucial for creating functional semiconductor devices.
Existing doping methods for InP nanowires often face limitations in controllability and scalability.

Purpose of the Study:

To report the in situ doping of InP nanowires using tetraethyltin (TESn) and dimethylzinc (DMZn) as precursors.
To demonstrate predictable synthesis of n-type and p-type InP nanowires.
To fabricate axial pn-junctions and investigate their properties.

Main Methods:

Particle-assisted growth of InP nanowires.
In situ doping using TESn for n-type and DMZn for p-type doping.

More Related Videos

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Related Experiment Videos

Last Updated: May 30, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Gate voltage dependent transport measurements for characterization.

Optimization of growth conditions to control tapering and create pn-junctions.

Main Results:

Predictable synthesis of n-type and p-type InP nanowires achieved.
Achieved n-type doping concentration tunable from 10^17 to 10^19 cm^-3 with increasing TESn.
Observed saturation of p-type doping with DMZn, potentially due to increased growth rates.
Fabricated axial pn-junctions exhibiting rectifying behavior.
Demonstrated light emission from the fabricated pn-junctions.

Conclusions:

TESn and DMZn are effective in situ precursors for n-type and p-type doping of InP nanowires, respectively.
The doping behavior differs significantly between n-type and p-type precursors.
Optimized growth conditions allow for the creation of functional pn-junctions and light-emitting diodes from doped InP nanowires.