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Updated: May 30, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Towards registered single quantum dot photonic devices.

K H Lee¹, F S F Brossard, M Hadjipanayi

¹Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, UK.

|August 12, 2011

Summary

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Researchers precisely marked and relocated single Indium Gallium Arsenide (InGaAs) quantum dots using cryogenic laser lithography. This technique is crucial for developing efficient quantum dot photonic devices by ensuring emitter-cavity alignment.

Area of Science:

Quantum physics
Materials science
Nanotechnology

Background:

Precise positioning of quantum emitters is vital for quantum technologies.
Solid-state cavity quantum electrodynamics requires spectral and spatial overlap between emitters and cavities.
Self-organized quantum dots offer potential as single-photon sources but require accurate localization.

Purpose of the Study:

To demonstrate a cryogenic laser lithography technique for registering single quantum dots.
To achieve accurate spatial marking and reacquisition of quantum dots.
To enable the fabrication of photonic devices utilizing precisely located quantum dots.

Main Methods:

Utilized an innovative cryogenic laser lithography technique.
Registered the position and wavelength of individual Indium Gallium Arsenide (InGaAs) quantum dots.

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Related Experiment Videos

Last Updated: May 30, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Fabricated a photonic crystal L3 cavity after quantum dot registration.

Main Results:

Achieved registration and reacquisition of a single quantum dot with 50 nm and 150 nm accuracy, respectively.
Demonstrated the successful fabrication of a photonic crystal L3 cavity.
Validated the technique's potential for efficient single quantum dot photonic device implementation.

Conclusions:

Cryogenic laser lithography enables accurate registration and reacquisition of single quantum dots.
This technique is essential for realizing solid-state cavity quantum electrodynamics.
The demonstrated method advances the development of efficient quantum dot-based photonic devices.