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Published on: December 21, 2015
Effective growth of boron nitride nanotubes by thermal chemical vapor deposition
Chee Huei Lee1, Jiesheng Wang, Vijaya K Kayatsha
1Department of Physics, Michigan Technological University, 1400 Townsend Drive, Houghton, MI 49931, USA.
Abstract:
Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace within an hour at 1200 °C. We found that these BNNTs have an absorption band edge of 5.9 eV, approaching that of single h-BN crystals, which are promising for future nanoscale deep-UV light emitting devices.
