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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors

Hsiao-Wen Zan1, Wu-Wei Tsai, Chia-Hsin Chen

  • 1Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan. hsiaowen@mail.nctu.edu.tw

Advanced Materials (Deerfield Beach, Fla.)
|August 12, 2011
PubMed
Summary

No abstract available in PubMed .

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