Related Experiment Video
Updated: May 30, 2026

12:32
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors
Hsiao-Wen Zan1, Wu-Wei Tsai, Chia-Hsin Chen
1Department of Photonic and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan. hsiaowen@mail.nctu.edu.tw
Advanced Materials (Deerfield Beach, Fla.)
|August 12, 2011
Summary
No abstract available in PubMed .

