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Updated: May 30, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Generation and detection of spin current in the three-terminal quantum dot
1Department of Physics, Tsinghua University, Beijing, People's Republic of China.
Abstract:
We propose a novel device composed of a quantum dot tunneling coupled to ferromagnetic, superconducting, and normal-metal leads. This device can generate, manipulate, and detect pure spin current through the interplay between the spin-polarized quantum transport and the Andreev reflection. The spin current in this device is a well-defined conserved current since there is no need for any spin-orbit coupling. The proposed device is realizable using present nanotechnology.
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