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Hybrid flexible vertical nanoscale diodes prepared at low temperature in large area
L Aé1, Jie Chen, M Ch Lux-Steiner
1Helmholtz-Zentrum Berlin für Materialien und Energie GmbHFormer Hahn-Meitner Institut Berlin, Glienicker Strasse 100, 14109 Berlin, Germany.
Abstract:
Fabrication and operation of hybrid flexible vertical nanoscale diodes are reported. The diodes, formed by n-type ZnO and p-type CuSCN, were embedded in a 6 µm polymer foil, provided with vertical cylindrical openings of about 100 nm, by using a low temperature solution based electrochemical deposition technique. Electrical measurements show diode function with sound device characteristics at operation temperatures up to 67 °C. This heterojunction shows the potential for ZnO based ultraviolet light-emitting diodes.
