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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
1Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, 230026, People's Republic of China.
Dynamic gap generation in graphene is influenced by Coulomb interaction. Energy dependence and fermion velocity renormalization are crucial factors affecting critical interaction strength.
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