Site-selected doping in silicon nanowires by an external electric field

The properties of dopant-related defects in silicon nanowires are key characteristics in semiconductive devices. Our first-principles calculations predicted that the preferred doping sites of B and P atoms in hydrogen-passivated silicon nanowires have opposite distribution behavior under electric field, suggesting a steady intrinsic p-n junction can be spontaneously formed in (B and P) codoped silicon nanowires.